ON THEORY OF SURFACE STATES OF ELECTRONS IN SEMICONDUCTORS

被引：15

作者：

BARTOS, I

机构：

[1] Institute of Solid State Physics, Czechoslovak Academy of Sciences, Prague

来源：

SURFACE SCIENCE | 1969年 / 15卷 / 01期

关键词：

D O I：

10.1016/0039-6028(69)90067-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Extension of the full zone kp-method to calculations of surface states of electrons is formulated and its approximations are critically discussed on (100)-surfaces of Ge and Si. © 1969.

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页码：94 / &

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