OXIDATION OF SULFUR-TREATED GAAS-SURFACES STUDIED BY PHOTOLUMINESCENCE AND PHOTOELECTRON-SPECTROSCOPY

被引：34

作者：

OSHIMA, M ^{[1
]}

SCIMECA, T ^{[1
]}

WATANABE, Y ^{[1
]}

OIGAWA, H ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SYNCHROTRON RADIATION; PHOTOELECTRON SPECTROSCOPY; GAAS; SULFUR PASSIVATION; OXIDATION; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.32.518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial oxidation features of (NH4)2Sx-treated GaAs have been investigated by photoelectron spectroscopy in order to correlate the photoluminescence (PL) degradation caused by oxidation with band bending and surface chemical bonding changes. Direct correlation between PL degradation and the Ga oxide formation resulting in drastic upward band bending is observed. It is also found that the S-passivated surface consisting of 1 to 2 ML Ga-S layer comparatively inhibits oxidation reaction, and that the underlying GaAs is oxidized leaving the surface Ga-S layer unoxidized. This indicates a possibility of reducing PL degradation by forming a thicker Ga-S passivation layer.

引用

页码：518 / 522

页数：5

共 23 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].