ANALYSIS OF PARTIAL AND STAIR-ROD DISLOCATIONS BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION

It is shown how large angle convergent beam electron diffraction (LACBED) can be used to analyse the Burgers vectors of partial dislocations in Si, GaAs and CdTe. By selecting reflections in which adjoining stacking faults are out of contrast, it is demonstrated that the LACBED technique can be used to analyse Shockley and Frank partial dislocations, of 1/6[110] type present at stacking fault instersections. The potential of the technique for studying grain boundary and dissociated dislocations in general is discussed.