UNIVERSAL GONIOMETER FOR CHANNELING EXPERIMENTS

被引：8

作者：

SCHMID, K

RYSSEL, H

MULLER, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1972年 / 99卷 / 01期

关键词：

D O I：

10.1016/0029-554X(72)90142-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：121 / &

共 8 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[2] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[3]

ERIKSSON L, 1966, CAN NUCL TECHNOL, V5, P40

[4]

GIBSON WM, 1968, APR P C US SMALL ACC

[5] ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

GYULAI, J ;

MEYER, O ;

MAYER, JW ;

RODRIGUE.V .

APPLIED PHYSICS LETTERS, 1970, 16 (06) :232-&

[6]

HVALGARD JO, 1971, PHYS STAT SOL, V5, pU83

[7] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

MAYER, JW ;

ERIKSSON, L ;

PICRAUX, ST ;

DAVIES, JA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&

[8] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J].

NORTH, JC ;

GIBSON, WM .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :126-&

← 1 →