POSITRON LIFETIMES IN PROTON-IRRADIATED SILICON

[1] EFFECT OF VACANCY FORMATION ON TEMPERATURE DEPENDENCE OF POSITRON LIFETIME [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (17) : 1203 - +

[2] POSITRON ANNIHILATION CENTERS IN NACL [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (09) : 496 - &

[3] BRANDT W, 1965, POSITRON ANNIHILATIO, P155

[4] Theory of semiconductor response to charged particles [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3104 - 3112

[5] POSITRON ANNIHILATION AND DEFECTS IN METALS [J]. PHYSICS LETTERS A, 1969, A 30 (01) : 24 - &

[6] FABRI G, 1967, POSITRON ANNIHILATIO, P421

[7] FIESCHI R, 1968, PHYS REV, V175, P308

[8] TEMPERATURE DEPENDENCE OF POSITRON MEAN LIVES IN METALS [J]. PHYSICAL REVIEW LETTERS, 1967, 19 (17) : 946 - +

[9] MARION JB, 1968, NUCLEAR REACTION ANA, P5

[10] SCHWUTTKE GH, 1971, RADIATION EFFECTS, V6, P103

[1] EFFECT OF VACANCY FORMATION ON TEMPERATURE DEPENDENCE OF POSITRON LIFETIME [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (17) : 1203 - +

[2] POSITRON ANNIHILATION CENTERS IN NACL [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (09) : 496 - &

[3] BRANDT W, 1965, POSITRON ANNIHILATIO, P155

[4] Theory of semiconductor response to charged particles [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3104 - 3112

[5] POSITRON ANNIHILATION AND DEFECTS IN METALS [J]. PHYSICS LETTERS A, 1969, A 30 (01) : 24 - &

[6] FABRI G, 1967, POSITRON ANNIHILATIO, P421

[7] FIESCHI R, 1968, PHYS REV, V175, P308

[8] TEMPERATURE DEPENDENCE OF POSITRON MEAN LIVES IN METALS [J]. PHYSICAL REVIEW LETTERS, 1967, 19 (17) : 946 - +

[9] MARION JB, 1968, NUCLEAR REACTION ANA, P5

[10] SCHWUTTKE GH, 1971, RADIATION EFFECTS, V6, P103