PROPERTIES OF RF-SPUTTERED ZINC-OXIDE BASED THIN-FILMS MADE FROM DIFFERENT TARGETS

被引：27

作者：

MARTINEZ, MA

HERRERO, J

GUTIERREZ, MT

机构：

[1] Instituto de Energías Renovables (CIEMAT), 28040 Madrid, Avda. Complutense

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 31卷 / 04期

关键词：

D O I：

10.1016/0927-0248(94)90191-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn. ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al2O3 (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380-degrees-C with E(g) = 3.25-3.35 eV and rho = 4.8 X 10(-4) OMEGA cm. Reduction of substrate temperature at 200-degrees-C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al2O3 targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1 X 10(-3) OMEGA cm respectively.

引用

页码：489 / 498

页数：10