BAND LINEUP AT AN ORGANIC-INORGANIC SEMICONDUCTOR HETEROINTERFACE - PERYLENETETRACARBOXYLIC DIANHYDRIDE GAAS(100)

被引：77

作者：

HIROSE, Y

CHEN, W

HASKAL, EI

FORREST, SR

KAHN, A

机构：

[1] Department of Electrical Engineering, Advanced Technology Center for Photonics and Optoelectronic Materials, Princeton University, Princeton

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7+/-0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4+/-0.15. eV The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.

引用

页码：3482 / 3484

页数：3

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