SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .2. APPLICATION TO INP-BASED COMPOUND SEMICONDUCTORS

被引：55

作者：

FORREST, SR ^{[1
]}

KAPLAN, ML ^{[1
]}

SCHMIDT, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2406 / 2418

页数：13

共 26 条

[1] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] A STUDY OF INTERFACE STATES IN METAL-GAAS (110) STRUCTURES BY SCHOTTKY CAPACITANCE SPECTROSCOPY
CHEKIR, F
BARRET, C
VAPAILLE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6474 - 6480
[4] SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 951 - 957
[5] EVALUATION OF III-V-SEMICONDUCTOR WAFERS USING NONDESTRUCTIVE ORGANIC-ON-INORGANIC CONTACT BARRIERS
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
GATES, JV
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2892 - 2895
[6] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1492 - 1507
[7] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .2. DEPENDENCE ON ORGANIC FILM AND METAL CONTACT PROPERTIES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 543 - 551
[8] ORGANIC-ON-GAAS CONTACT BARRIER DIODES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
PARSEY, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 867 - 870
[9] SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .1. THEORY OF THE EFFECTS OF SURFACE-STATES ON DIODE POTENTIAL AND AC ADMITTANCE
FORREST, SR
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 513 - 525
[10] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201

← 1 2 3 →