CADMIUM ZINC TELLURIDE DETECTORS FOR INDUSTRIAL RADIATION MEASUREMENT

被引：6

作者：

BUTLER, JF

DOTY, FP

LINGREN, C

APOTOVSKY, B

机构：

[1] Aurora Technologies Corporation, San Diego, CA 92121

来源：

APPLIED RADIATION AND ISOTOPES | 1993年 / 44卷 / 10-11期

关键词：

D O I：

10.1016/0969-8043(93)90086-P

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Cd1-xZnxTe room temperature semiconductor detectors offer improved measurement capability, stability and lifetime over currently employed devices such as CdTe and HgI2 detectors. These improved features along with the compactness, durability and other properties inherent in solid-state devices often make it the correct decision to use Cd1-xZnxTe in place of detectors such as NaI(Tl) scintillators and proportional counters, and provide the basis for new approaches to instrumentation, including the use of imaging arrays and current-mode operation.

引用

页码：1359 / 1366

页数：8

共 4 条

[1] GAMMA-RAY AND X-RAY-DETECTORS MANUFACTURED FROM CD1-XZNX TE GROWN BY A HIGH-PRESSURE BRIDGMAN METHOD [J].

BUTLER, JF ;

DOTY, FP ;

APOTOVSKY, B ;

LAJZEROWICZ, J ;

VERGER, L .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :291-295

[2] CD1-XZNXTE4 GAMMA-RAY DETECTORS [J].

BUTLER, JF ;

LINGREN, CL ;

DOTY, FP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (04) :605-609

[3]

BUTLER JF, 1993, 1992 SPIE INT S OPT, V1734, P131

[4]

DOTY FP, 1992, J VAC SCI TECHNOL B, V10, P1416

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