HIGH-MOBILITY GESI PMOS ON SIMOX

被引:34
作者
NAYAK, DK
WOO, JCS
YABIKU, GK
MACWILLIAMS, KP
PARK, JS
WANG, KL
机构
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,SOLID STATE ELECTR LAB,LOS ANGELES,CA 90024
[2] AEROSP CORP,EL SEGUNDO,CA 90245
[3] JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109
[4] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024
基金
美国国家科学基金会;
关键词
D O I
10.1109/55.258002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge0.3Si0.7/Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.
引用
收藏
页码:520 / 522
页数:3
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