ZNS MOLECULAR-BEAM EPITAXY ON SILICON SUBSTRATES

We report on the deposition of ZnS films of high structural quality onto Si(100) substrates. Films with thicknesses from 0. 75 to 4 mu m were examined by X-ray diffraction in both the Bragg and Read configurations. The ZnS 400 peak in Cu K alpha //1 X-ray diffraction had a linewidth of 0. 04 degree -0. 06 degree , comparable with that of the silicon substrate. The high structural quality of these films suggests their use as buffer layers for II-VI device growth.