HIGH-QUALITY YBA2CU3O7-X THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION AT LOW-TEMPERATURE

被引：38

作者：

ZHAO, J

LI, YQ

CHERN, CS

LU, P

NORRIS, P

GALLOIS, B

KEAR, B

COSANDEY, F

WU, XD

MUENCHAUSEN, RE

GARRISON, SM

机构：

[1] EMCORE Corporation, Somerset, NJ 08873

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.105468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystalline epitaxial YBa2Cu3O7-x thin films with a sharp superconducting transition temperature of 90 K and a critical current density of 3.3 X 10(6) A/cm2 at 77 K were prepared by a plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. The films were formed in situ on ( 100) LaAlO3 substrates at a temperature of 670-degrees-C in 2 Torr partial pressure of N2O. X-ray analysis indicated that films grew epitaxially with the c-axis perpendicular to the substrate and the a and b axes uniformly aligned along the LaAlO3 [100] directions. High-resolution transmission electron microscopy along with electron diffraction revealed that the films grew epitaxially with atomically abrupt film-substrate interfaces. The high degree of epitaxial crystallinity of the films was also confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9%.

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页码：1254 / 1256

页数：3

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