DENSIFICATION, ANISOTROPIC DEFORMATION, AND PLASTIC-FLOW OF SIO2 DURING MEV HEAVY-ION IRRADIATION

被引：101

作者：

SNOEKS, E ^{[1
]}

POLMAN, A ^{[1
]}

VOLKERT, CA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 19期

关键词：

D O I：

10.1063/1.112646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The response of SiO2 thin films and implantation masks to 4.0 MeV Xe irradiation is studied. Trenches in silica deform dramatically after irradiation with 3X10(15) ions/cm(2). In situ wafer curvature measurements show that thin planar silica films first densify by 3.6% during irradiation. The resulting stress then relaxes viscously by radiation-enhanced Newtonian flow. At a flux of 3x10(10) Xe ions/cm(2)s the measured shear viscosity was 6X10(13)Pa s. We find evidence that an irradiation induced anisotropic deformation mechanism is present in the silica films. In equilibrium, this deformation leads to an average compressive saturation stress as large as 4.5x10(7) Pa. (C) 1994 American Institute of Physics.

引用

页码：2487 / 2489

页数：3

共 11 条

[1] PLASTIC-DEFORMATION IN SIO2 INDUCED BY HEAVY-ION IRRADIATION [J].