EFFECTS OF STRAIN ON BORON-DIFFUSION IN SI AND SI1-XGEX

被引：104

作者：

KUO, P ^{[1
]}

HOYT, JL ^{[1
]}

GIBBONS, JF ^{[1
]}

TURNER, JE ^{[1
]}

LEFFORGE, D ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron diffusion in in situ doped Si1-xGex and Si, subjected to inert-ambient furnace annealing at 800°C, was investigated. For Si1-xGex, the effect of biaxial compressive and tensile strain on boron diffusion was studied using Si1-xGex layers with a constant Ge content (x≈0.10 and x≈0.20) grown epitaxially on various relaxed Si1-yGey (0≤y≤0.20) substrates. Boron diffusion is primarily a function of Ge content, x in the Si1-xGex layers, and does not show a strong dependence on macroscopic biaxial strain. For Si, the effect of biaxial tension was investigated using relaxed Si1-yGey layers as substrate templates for epitaxial Si layers. As in Si1-xGex, boron diffusion in Si does not depend strongly on biaxial strain. © 1995 American Institute of Physics.

引用

页码：580 / 582

页数：3

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