STUDY OF THE CO/SI(111) INTERFACE FORMATION USING ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：16

作者：

BENSAOULA, A

VEUILLEN, JY

TAN, TAN

DERRIEN, J

DECRESCENZI, M

机构：

[1] UNIV AIX MARSEILLE 2,CNRS,CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 09,FRANCE

[2] UNIV AIX MARSELLE 3,CNRS,CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 09,FRANCE

来源：

SURFACE SCIENCE | 1991年 / 241卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)90102-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron energy loss spectroscopy (EELS) has been applied to investigate the Co/Si(111) interface formation at room temperature. The results allow to conclude that at very low coverage theta less-than-or-equal-to 2-3 monolayers a CoSi2-like phase is already formed. With higher coverages the topmost layer displays an average composition richer in Co and finally for theta greater-than-or-equal-to 10 monolayers a film of almost pure Co is growing on top of the interface. During the interface development, an interface plasmon coupling effect has also been evidenced by the EELS technique.

引用

页码：425 / 430

页数：6

共 23 条

[1] HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION [J].

BOSCHERINI, F ;

JOYCE, JJ ;

RUCKMAN, MW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (09) :4216-4220

[2] HETEROEPITAXY OF METALLIC AND SEMICONDUCTING SILICIDES ON SILICON [J].

CHERIEF, N ;

CINTI, R ;

DECRESCENZI, M ;

DERRIEN, J ;

NGUYEN, TAT ;

VEUILLEN, JY .

APPLIED SURFACE SCIENCE, 1989, 41-2 :241-252

[3] REFLECTION ELECTRON-ENERGY-LOSS INVESTIGATION OF THE ELECTRONIC AND STRUCTURAL-PROPERTIES OF PALLADIUM [J].

CHIARELLO, G ;

COLAVITA, E ;

DECRESCENZI, M ;

NANNARONE, S .

PHYSICAL REVIEW B, 1984, 29 (09) :4878-4889

[4] SINGLE-PARTICLE AND COLLECTIVE EXCITATIONS IN FERROMAGNETIC IRON FROM ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].

COLAVITA, E ;

DECRESCENZI, M ;

PAPAGNO, L ;

SCARMOZZINO, R ;

CAPUTI, LS ;

ROSEI, R ;

TOSATTI, E .

PHYSICAL REVIEW B, 1982, 25 (04) :2490-2502

[5]

DEFRESART E, COMMUNICATION

[6] ELS INVESTIGATION OF THE SI-PD INTERFACE [J].

DELPENNINO, U ;

SASSAROLI, P ;

VALERI, S ;

NANNARONE, S .

SURFACE SCIENCE, 1982, 122 (02) :307-316

[7] CO/SI(111) INTERFACE FORMATION AT ROOM-TEMPERATURE [J].

DERRIEN, J ;

DECRESCENZI, M ;

CHAINET, E ;

DANTERROCHES, C ;

PIRRI, C ;

GEWINNER, G ;

PERUCHETTI, JC .

PHYSICAL REVIEW B, 1987, 36 (12) :6681-6684

[8]

DERRIEN J, 1990, IN PRESS PHYS SCR

[9]

FROITZHEIM H, 1977, TOPICS CURRENT PHYSI, V4

[10] ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].

GEWINNER, G ;

PIRRI, C ;

PERUCHETTI, JC ;

BOLMONT, D ;

DERRIEN, J ;

THIRY, P .

PHYSICAL REVIEW B, 1988, 38 (03) :1879-1884

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