ON THE PHASE FORMATION OF LASER DEPOSITED BI-SR-CA-CU-O FILMS ON MGO, ZRO2 AND SILICON WITH YSZ BUFFER LAYERS

High-T(c) superconducting Bi-Sr-Ca-Cu-O films have been prepared by in-situ excimer laser induced deposition on MgO (100), ZrO2 (100) and textured yttrium stabilized zirconia (YSZ) buffer layers on silicon from Bi2Sr2Ca2Cu3Ox (2223) targets. Epitaxial YSZ films have been grown on Si (100) and Si (111) by in-situ deposition using a Nd-YAG laser. Under optimized deposition parameters we obtained nearly single Bi2Sr2Ca1Cu2Ox (2212) phase high-T(c) superconducting films on ZrO2 and on YSZ layers on Si substrates. On MgO single crystals we observed under the same experimental conditions a considerably higher amount of the 2201 phase. The T(c)(0) of more than 80 K of the films on ZrO2 single crystals was reduced to T(c)(0) = 70 K in the case of Si substrates with YSZ buffer layers due to interdiffusion at the necessary high substrate temperatures of about 825-degrees-C.