EFFECT OF BOUNDARY SCATTERING ON HIGH-TEMPERATURE THERMAL-CONDUCTIVITY OF SILICON

被引：31

作者：

SAVVIDES, N ^{[1
]}

GOLDSMID, HJ ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,KENSINGTON 2033,AUSTRALIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 10期

关键词：

D O I：

10.1088/0022-3719/6/10/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1701 / 1708

页数：8

共 9 条

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PENN, AW
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[5] ANALYSIS OF LATTICE THERMAL CONDUCTIVITY
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[6] HIGH TEMPERATURE THERMAL CONDUCTIVITY OF SEMICONDUCTOR ALLOYS
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[7] THERMAL CONDUCTIVITY OF SINTERED SEMICONDUCTOR ALLOYS
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[8] MEASUREMENT OF THERMAL-CONDUCTIVITY BY A PARALLEL FLOW SANDWICH TECHNIQUE USING PELTIER EFFECT
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GOLDSMID, HJ
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (06): : 553 - &
[9] BOUNDARY SCATTERING OF PHONONS IN SILICON CRYSTALS AT ROOM-TEMPERATURE
SAVVIDES, N
GOLDSMID, HJ
[J]. PHYSICS LETTERS A, 1972, A 41 (03) : 193 - &