HIGH-DOSE RATE BURNOUT IN SILICON EPITAXIAL TRANSISTORS

被引：5

作者：

WROBEL, TF

AZAREWICZ, JL

机构：

[1] IRT CORP,SAN DIEGO,CA 92138

[2] JAYCOR,DEL MAR,CA 92014

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1411 / 1415

页数：5

共 9 条

[1] PACKAGING EFFECTS ON TRANSISTOR RADIATION RESPONSE [J].

BERGER, RA ;

AZAREWICZ, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2568-2572

[2] ANOMALOUS PHOTOCURRENTS IN LOW-POWER EPITAXIAL TRANSISTORS [J].

GAILLARD, R ;

GENRE, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :406-413

[3] ANOMALOUS PHOTOCURRENT GENERATION IN TRANSISTOR STRUCTURES [J].

HABING, DH ;

WIRTH, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :86-&

[4]

LEADON RE, 1969, DASA2358 REP

[5] HIGH INJECTION IN EPITAXIAL TRANSISTORS [J].

POON, HC ;

GUMMEL, HK ;

SCHARFETTER, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :455-+

[6]

POON HC, 1970, BSTJ MAY, P847

[7] SILICON CALORIMETER SYSTEM FOR GAMMA-RADIATION AND ELECTRON-BEAM RADIATION-DOSIMETRY [J].

WROBEL, TF ;

BERGER, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2314-2318

[8]

WROBEL TF, 1974, INTELRT8025480 IRT C

[9]

WUNCH D, 1968, IEEE T NUCL SCI, V15, P244

← 1 →