DISSOCIATIVE ELECTRON-ATTACHMENT OF CH3BR ON GAAS(110) BY THERMALIZED PHOTOEXCITED SUBSTRATE ELECTRONS

被引：32

作者：

YANG, QY

SCHWARZ, WN

OSGOOD, RM

机构：

[1] Columbia Radiation Laboratory, Columbia University, New York

来源：

JOURNAL OF CHEMICAL PHYSICS | 1993年 / 98卷 / 12期

关键词：

D O I：

10.1063/1.464441

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using kinetic-energy-resolved measurement of adsorbate fragmentation, we observe an electron-transfer reaction from the conduction band minimum of a semiconductor surface to a molecular adsorbate. Bond cleavage in the molecular system, CH3Br on GaAs(110), occurs through a mechanism analogous to gas-phase dissociative electron attachment.

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页码：10085 / 10088

页数：4

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