PHOTOSTIMULATED DESORPTION IN LASER-ASSISTED ETCHING OF SILICON

被引：31

作者：

HOULE, FA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.61.1871

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1871 / 1874

页数：4

共 22 条

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HOULE, FA .

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HOULE, FA .

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[7] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .1. INFLUENCE OF DOPING ON STEADY-STATE PHENOMENA [J].

HOULE, FA .

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[8] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .2. KINETICS OF THE INITIAL RESPONSE TO LIGHT [J].

HOULE, FA .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (10) :4851-4858

[9] A REINVESTIGATION OF THE ETCH PRODUCTS OF SILICON AND XEF - DOPING AND PRESSURE EFFECTS [J].

HOULE, FA .

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[10]

HOULE FA, IN PRESS

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