A REINVESTIGATION OF THE ETCH PRODUCTS OF SILICON AND XEF - DOPING AND PRESSURE EFFECTS

被引：75

作者：

HOULE, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3018 / 3027

页数：10

相关论文

共 34 条

[1] DETAILED BALANCING AND QUASI-EQUILIBRIUM IN ADSORPTION OF HYDROGEN ON COPPER
CARDILLO, MJ
BALOOCH, M
STICKNEY, RE
[J]. SURFACE SCIENCE, 1975, 50 (02) : 263 - 278
[2] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619
[3] DISSOCIATION OF SF6, CF4, AND SIF4 BY ELECTRON IMPACT
DIBELER, VH
MOHLER, FL
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1948, 40 (01): : 25 - 29
[4] DETECTION OF RADICALS AND EXCITED MOLECULES IN DYNAMIC-SYSTEMS
FITE, WL
[J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1975, 16 (1-2): : 109 - 124
[5] FLAMM DL, 1983, SOLID STATE TECHNOL, P117
[6] INTERNAL ENERGY-TRANSFER IN MOLECULE-SURFACE COLLISIONS
FONER, SN
HUDSON, RL
[J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 75 (09) : 4727 - 4729
[7] FONER SN, 1966, ADV ATOM MOL PHYS, V2, P385
[8] VELOCITY DISPERSION OF SQUARE-MODULATED MAXWELLIAN MOLECULAR BEAMS - INTEGRAL FN(X) EQUALS INTEGRAL INFIN/0 ZN EXP)MINUSZ2)DZ
HARRISON, H
HUMMER, DG
FITE, WL
[J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2567 - &
[9] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .1. INFLUENCE OF DOPING ON STEADY-STATE PHENOMENA
HOULE, FA
[J]. JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (09) : 4237 - 4246
[10] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .2. KINETICS OF THE INITIAL RESPONSE TO LIGHT
HOULE, FA
[J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (10) : 4851 - 4858

← 1 2 3 4 →