SCANNING-TUNNELING-MICROSCOPE TIP-INDUCED MIGRATION OF VACANCIES ON GAP(110)

被引:67
作者
EBERT, P [1 ]
LAGALLY, MG [1 ]
URBAN, K [1 ]
机构
[1] UNIV WISCONSIN, MADISON, WI 53706 USA
关键词
D O I
10.1103/PhysRevLett.70.1437
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Scanning-tunning-microscope tip-induced migration of divacancies is observed on n-doped GaP(110). The motion occurs only at negative polarity of the tunneling voltage and along the [110BAR] direction, independent of the scanning direction, and is thus purely nonthermal. It is suggested that a field-induced reduction of the barrier for the migration initiates the motion. A quantitative analysis of the migration indicates long-lived excited states, consistent with charged trap states in doped semiconductors.
引用
收藏
页码:1437 / 1440
页数:4
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