HALL MOBILITY OF HOLES IN ANTHRACENE

被引：23

作者：

KORN, AI

ARNDT, RA

DAMASK, AC

机构：

[1] Queens College, City University of New York, Flushing

[2] Brookhaven National Laboratory, Upton

[3] New York City Community College, City University of New York, Brooklyn

来源：

PHYSICAL REVIEW | 1969年 / 186卷 / 03期

关键词：

D O I：

10.1103/PhysRev.186.938

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Hall effect for holes has been measured in high-purity single crystals of anthracene. The magnetic field was directed along each of the a, b, and c′ crystallographic directions, and the electric field was in each of the two directions orthogonal to the magnetic field. The Hall mobilities μH were computed from the measurements and the drift mobilities μD were measured in the same crystals. The ratios μHμD are BaIb, -4.3; BaIc′, -4.8; BbIa, +7.6; BbIc′, +8.8; Bc′Ia, -1.5; and Bc′Ib, -1.5. These results are consistent with a band model for charge-carrier transport. © 1969 The American Physical Society.

引用

页码：938 / &

共 28 条

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