FILAMENTARY AC ELECTROLUMINESCENCE IN ZNS-MN

被引：14

作者：

RUHLE, W ^{[1
]}

MARRELLO, V ^{[1
]}

ONTON, A ^{[1
]}

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95193

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 06期

关键词：

Electroluminescence; Thin Film Devices; ZnS:Mn;

D O I：

10.1007/BF02651187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Steady state and switching behavior of single luminescence filaments in a-BaTiO3/ZnS:Mn/a-BaTiO3 ac thin film electroluminescence devices have been studied. The brightness-voltage amplitude hysteresis, or memory effect, of these devices results from the ensemble behavior of luminescing filaments that are bistable in their luminescence level. A trap depth of 1-1.2eV is estimated on the assumption that the voltage threshold for luminescence involves electric field emission from traps. The temperature dependence of electroluminescence near the threshold voltage is investigated. © 1979 AIME.

引用

页码：839 / 853

页数：15

共 7 条

[1]

ALT PM, UNPUBLISHED

[2]

GEISS RH, UNPUBLISHED

[3]

KUKIMOTO Y, 1965, PHYS LETT NETHERLAND, V19, P551

[4] MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE [J].

MARRELLO, V ;

RUHLE, W ;

ONTON, A .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :452-454

[5]

PIPER WW, 1958, SOLID STATE PHYS, V6, P95

[6] AC THIN-FILM ELECTROLUMINESCENCE, FILAMENTARY EMISSION AND ITS MEMORY EFFECT [J].

RUHLE, W ;

MARRELLO, V ;

ONTON, A .

JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :729-738

[7]

Yamauchi Y., 1974, 1974 International Electron Devices Meeting (IEDM), P352, DOI 10.1109/IEDM.1974.6219665

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