LOW STRESS OXIDE-POLYSILICON SANDWICHED MICROBRIDGES

被引:3
作者
BHATNAGAR, YK
NATHAN, A
机构
[1] Department of Electrical and Computer Engineering, University of Waterloo, Ontario
关键词
D O I
10.1149/1.2069132
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Residual stresses in thin films have an important bearing on the formation of free-standing microstructures using conventional silicon technology. Thermal processing constraints become even more restrictive when multilayer composite microstructures are required. We report here on the fabrication of silicon dioxide-polysilicon-silicon dioxide-microbridges with low residual stresses on crystalline silicon substrates using appropriate annealing procedures and an anisotropic etch.
引用
收藏
页码:3623 / 3626
页数:4
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