STRUCTURE MODIFICATION BY ION-BOMBARDMENT DURING DEPOSITION

[1] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[2] CULBERTON R, 1966, 8TH C TUB TECHN IEEE, P101

[3] Glang LI, 1970, HDB THIN FILM TECHNO, P4

[4] HOLMAN WR, 1967, P C CHEM VAPOR DEPOS, P127

[5] Kennedy K., 1968, T INT VACUUM METALLU, P195

[6] KURTENAT RC, 1968, T INT VACUUM METALLU, P235

[7] METAL EDGE COVERAGE AND CONTROL OF CHARGE ACCUMULATION IN RF SPUTTERED INSULATORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 182 - &

[8] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[9] INCORPATION OF HELIUM IN DEPOSITED GOLD FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 194 - +

[10] MATTOX DM, 1969, T SAE, P2175

[1] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[2] CULBERTON R, 1966, 8TH C TUB TECHN IEEE, P101

[3] Glang LI, 1970, HDB THIN FILM TECHNO, P4

[4] HOLMAN WR, 1967, P C CHEM VAPOR DEPOS, P127

[5] Kennedy K., 1968, T INT VACUUM METALLU, P195

[6] KURTENAT RC, 1968, T INT VACUUM METALLU, P235

[7] METAL EDGE COVERAGE AND CONTROL OF CHARGE ACCUMULATION IN RF SPUTTERED INSULATORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 182 - &

[8] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[9] INCORPATION OF HELIUM IN DEPOSITED GOLD FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 194 - +

[10] MATTOX DM, 1969, T SAE, P2175