INFLUENCE OF GAMMA-ALUMINA ON THE STRUCTURE OF BARRIER ANODIC OXIDE-FILMS ON ALUMINUM

被引:32
作者
KOBAYASHI, K
SHIMIZU, K
机构
[1] Keio Univ, Hiyoshi, Jpn, Keio Univ, Hiyoshi, Jpn
关键词
ALUMINA; -; CRYSTALS; Structure; FILMS; OXIDES;
D O I
10.1149/1.2095826
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Barrier anodic oxide films formed on clean and smooth aluminum surfaces are generally amorphous. However, the presence of a thin layer of thermal oxide on the surface of aluminum promotes the growth of gamma prime -alumina during subsequent anodic oxidation. Thermal oxide may or may not contain gamma -alumina crystals, depending upon growth conditions. When the thermal oxide layer contains gamma -alumina crystals, these become incorporated into the growing barrier oxide layer and act as nuclei for the amorphous to gamma prime -alumina transformation. In this study, transmission electron microscopy of ultramicrotomed sections of the aluminum substrate and the barrier oxide was employed to obtain further insight into the influence of gamma -alumina on the structure of barrier anodic oxide films on aluminum. It is shown that no oxide formation is observed above the gamma -alumina crystal nor at the interface between the gamma -alumina crystal and aluminum substrate. Barrier film growth is observed over the aluminum surface surrounding the gamma -alumina crystal. Within the barrier oxide, a gamma prime -alumina crystal is observed clearly to grow into the amorphous barrier oxide.
引用
收藏
页码:908 / 910
页数:3
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