MECHANISM OF FORMATION OF 60-DEGREES AND 90-DEGREES MISFIT DISLOCATIONS IN SEMICONDUCTOR HETEROSTRUCTURES

被引:50
作者
NARAYAN, J
SHARAN, S
机构
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 10卷 / 04期
基金
美国国家科学基金会;
关键词
D O I
10.1016/0921-5107(91)90100-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A proposal is made and experimental evidence provided for a mechanism of formation of 60-degrees glissile (a/2)<101>{111} (mixed) and 90-degrees (a/2)<110>{001} (edge) misfit dislocations in semiconductor heterostructures such as Ge/Si and GaAs/Si. With increasing thickness of the epilayer the nature of dislocations was found to change from being predominantly 60-degrees to mostly 90-degrees. Calculations of atomic structures of dislocations using Stillinger-Weber interatomic potentials were done to show that it is energetically favorable for a 60-degrees core to transform into a 90-degrees core. Thus the strained layer system relaxes its energy by minimizing short-range core distortions as well as long-range elastic displacements. A distinguishing feature of the present mechanism is that the second 60-degrees dislocation is nucleated near the surface in the appropriate glide plane to meet (primarily via a glide process and partly by a climb process) and react with the first 60-degrees dislocation which is already at the interface. High resolution transmission electron microscopy studies have been performed to rationalize and confirm the proposed mechanism.
引用
收藏
页码:261 / 267
页数:7
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