SIMULATION OF SUBMICROMETER GAAS-MESFETS USING A FULL DYNAMIC TRANSPORT MODEL

被引：97

作者：

FENG, YK

HINTZ, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 09期

关键词：

D O I：

10.1109/16.2574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1419 / 1431

页数：13

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