共 16 条
- [1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792
- [2] BEROLO O, 1972, 11TH P INT C PHYS SE, P1420
- [4] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194
- [5] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
- [7] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977