P-TYPE CDS THIN-FILMS FORMED BY INSITU CU DOPING IN THE CHEMICAL BATH

被引：71

作者：

SEBASTIAN, PJ

机构：

[1] Photo Voltaic Systems Group, Laboratorio de Energia Solar IIM, UNAM, 62580 Temixco, Morelos

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of p-type CdS thin films, doped with Cu, in a chemical bath, is reported for the first time. The Cu doped films showed amorphous nature and exhibited high electrical conductivity as compared to undoped films, which were near stoichiometric with n-type conductivity and crystalline in nature. Cu doping influenced the photocurrent response, structural, electrical, and optical properties of the films. The optical band gap of the CdS film varied from 2.35 to 2 eV after Cu doping. The-potential application of these films as an absorber layer in thin film solar cells is being investigated.

引用

页码：2956 / 2958

页数：3

共 12 条

[1] STRUCTURE AND GROWTH-KINETICS OF ELECTRODEPOSITED CDS THIN-FILMS FOR SOLAR-CELL APPLICATIONS [J].