CONTRIBUTION TO THE STUDY OF IMPURITY LEVELS IN CDTE FILMS - MATERIAL FOR GAMMA-RAY DETECTORS AND SOLAR-CELLS

被引：9

作者：

LHERMITTE, C

VAUTIER, C

机构：

[1] Laboratoire de Physique des Couches Minces, U.E.R. des Sciences et Techniques, Mont-Saint-Aignan

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90214-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

From a study of space-charge-limited conduction and transient photoconductivity effects we propose two theoretical models and we apply them to n-type CdTe films with a uniform distribution of traps in the band gap. The essential characteristics of the phenomena and the corresponding values of the position and width of the distribution, the density and capture cross section of the trapping and recombination centres and the lifetime of the carriers are determined. © 1979.

引用

页码：83 / 88

页数：6

共 15 条

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[2]

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[3]

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[7]

LHERMITTE C, UNPUBLISHED

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[10]

MANCINI AM, 1976, 2ND INT S CDTE STRAS

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