MAGNETICALLY EXCITED PLASMA OXYNITRIDATION OF SI AT ROOM-TEMPERATURE

Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited (N-2 + Ar) plasma. Si oxynitride, probably Si2N2O, was grown only when Ar was mixed with N-2 while SiO2 was solely formed with N-2 only. At the top surface of the grown him with mixed gas, SiO2 was always grown due to residual oxygen in N-2 gas, so that the SiO2/Si2N2O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The (N-2 + Ar) plasma treatment after deposition of Si3N4 powder on Si was also discussed.