DIFFUSE-X-RAY SCATTERING FROM THIN-FILMS WITH DEFECTS

被引：13

作者：

BAHR, D

PRESS, W

JEBASINSKI, R

MANTL, S

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL, INST EXPTL PHYS, D-24098 KIEL, GERMANY

[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.51.12223

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent calculations predict a dramatic influence of interfaces on the scattering of x rays by single crystals with defects. The power law describing the diffuse scattering and the peak shape of the Bragg reflections depends on the boundary conditions of the crystal lattice. These theoretical results have been verified by grazing incidence diffraction of synchrotron radiation performed on thin layers of silicon and cobalt disilicide. By variation of the angle of incident a depth profiling of the defect density has been performed. © 1995 The American Physical Society.

引用

页码：12223 / 12227

页数：5

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