LOW-NOISE MICROWAVE BIPOLAR-TRANSISTOR WITH SUB-HALF-MICROMETER EMITTER WIDTH

被引:8
作者
HSU, TH
机构
关键词
D O I
10.1109/T-ED.1978.19160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:723 / 730
页数:8
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共 12 条
[1]  
ANTONIADIS DA, 1977, 50191 STANF U TECH R
[2]   LOW-NOISE IMPLANTED-BASE MICROWAVE TRANSISTORS [J].
ARCHER, JA .
SOLID-STATE ELECTRONICS, 1974, 17 (04) :387-393
[3]   MICROWAVE TRANSISTORS - THEORY AND DESIGN [J].
COOKE, HF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1163-+
[4]   DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696
[5]   LIMITATIONS OF NIELSENS AND RELATED NOISE EQUATIONS APPLIED TO MICROWAVE BIPOLAR-TRANSISTORS, AND A NEW EXPRESSION FOR FREQUENCY AND CURRENT DEPENDENT NOISE-FIGURE [J].
HAWKINS, RJ .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :191-196
[6]  
KAMIOKA H, 1974, DEC IEEE INT EL DEV, P279
[7]   DETERMINATION OF A MICROWAVE TRANSISTOR MODEL BASED ON AN EXPERIMENTAL STUDY OF ITS INTERNAL STRUCTURE [J].
KRONQUIST, RL ;
FOURRIER, JY ;
PESTIE, JP ;
BRILMAN, ME .
SOLID-STATE ELECTRONICS, 1975, 18 (11) :949-963
[8]  
PANKYATZ JM, 1973, DEC IEEE INT EL DEV, P44
[9]  
SNAPP CP, 1976, IEEE INT MICROWAVE S, P104
[10]  
TSAI TN, 1976, DEC IEEE INT EL DEV, P202