VACUUM-DEPOSITED METAL POLYANILINE SCHOTTKY DEVICE

被引：83

作者：

MISRA, SCK

RAM, MK

PANDEY, SS

MALHOTRA, BD

CHANDRA, S

机构：

[1] National Physical Laboratory, New Delhi-110 012, Dr. K. S. Krishnan Road

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.107600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

All vacuum-deposited metal/semiconducting polyaniline heterojunction Schottky devices using vacuum-evaporated polyaniline films of a thickness of the order of 0.1-mu-m have been prepared. Schottky junctions have been formed using the following metals, Al, Sn, In, Pb, Sb, and Ag. Electrical characterization has been carried out and electronic. parameters, including the barrier height and ideality factor, have been determined. Infrared optical absorption spectroscopy of the vacuum-deposited polyaniline films were used to determine the structure, energy band gap, and effect of various ambients on the vacuum-deposited polyaniline films.

引用

页码：1219 / 1221

页数：3

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