TEMPERATURE EFFECTS IN THE DRY ETCHING STEP OF A SILYLATION PROCESS

被引：2

作者：

JOUBERT, O

PONS, M

WEILL, A

PANIEZ, P

机构：

[1] Laboratoire de physique et Chimie des Procédés Plasma, Unité de recherche Associée, CNRS

[2] FRANCE TELECOMICNET-CN6, Meylan Cedex

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 03期

关键词：

D O I：

10.1149/1.2056187

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Substrate temperature is generally considered as an important parameter in polymer plasma etching. In this study, we demonstrate that if the substrate is not efficiently cooled during the dry development step of silylated resists, the silylated area may be melted and can flow on the resist pattern. This phenomenon is attributed to the low glass transition temperature of the silylated area.

引用

页码：L46 / L49

页数：4

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