EFFECTS OF GROWTH INTERRUPTION ON STRUCTURE OF MBE GROWN GAAS/ALAS HETERO-INTERFACES STUDIED BY X-RAY-DIFFRACTION

被引：8

作者：

KOSHIBA, S ^{[1
]}

NANAO, S ^{[1
]}

TSUDA, O ^{[1
]}

WATANABE, Y ^{[1
]}

SAKURAI, Y ^{[1
]}

SAKAKI, H ^{[1
]}

KAWATA, H ^{[1
]}

ANDO, M ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

Molecular Beam Epitaxy - Semiconductor Devices--Heterojunctions - X-Rays--Diffraction;

D O I：

10.1016/0022-0248(89)90349-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of 'growth interruption' on the structure of an MBE grown GaAs/AlAs superlattice were studied by X-ray diffraction measurements using anomalous scattering for gallium and arsenic atoms. The results revealed that 'Growth Interruption' improves the distribution of periods of the superlattice and that the period is decreased due to the re-evaporation of Ga-As layers during the interruption.

引用

页码：51 / 54

页数：4

共 7 条

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[7] PROPERTIES OF (AL,GA)AS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTION
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SPUTZ, SK
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