EFFECTS OF PRESSURE AND TEMPERATURE ON EPITAXIAL-GROWTH OF INP ON NONPLANAR SUBSTRATES USING OMVPE

The effects of pressure and temperature on the epitaxial growth of InP on the mesa-structured substrate have been investigated using OMVPE. At 550-degrees-C and 700 Torr, the reverse-mesa profile was observed. As the pressure decreases, the epitaxial growth profile changes from the reverse-mesa shape to the mesa shape. As the growth temperature increases, the growth profile follows the mesa-structured substrate even at high growth pressure. We propose that two major factors contributed to the formation of the reverse-mesa shape at low temperature and high pressure. We can explain the pressure effects on the epitaxial growth profile with these two factors at all growth temperatures ranging from 550 to 650-degrees-C. One factor is the growth rate enhancement on the (111)A facet compared to the growth rate on the (001) facet at low growth temperature, the other is the deficiency of constituent at the recess region of the epitaxial layer caused by reduced gas phase diffusivity at high pressure.