ELECTRONIC-PROPERTIES OF HIGHLY-DOPED SI(111)-(1X1) SURFACES PREPARED BY LASER ANNEALING

被引：4

作者：

EASTMAN, DE ^{[1
]}

HEIMANN, P ^{[1
]}

HIMPSEL, FJ ^{[1
]}

REIHL, B ^{[1
]}

ZEHNER, DM ^{[1
]}

WHITE, CW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 348

页数：2

共 5 条

[1] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[2] PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION
ZEHNER, DM
WHITE, CW
OWNBY, GW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 56 - 59
[3] ZEHNER DM, 1980, LASER ELECTRON BEAM, P20
[4] ZEHNER DM, 1980, APPL PHYS LETT, V37, P465
[5] ZEHNER DM, UNPUBLISHED