MULTIPLE QUANTUM-WELL LIGHT MODULATORS FOR THE 1.06 MU-M RANGE ON INP SUBSTRATES - INXGA1-XASYP1-Y INP, INASYP1-Y INP, AND COHERENTLY STRAINED INASYP1-Y INXGA1-XP

被引：35

作者：

WOODWARD, TK

CHIU, TH

SIZER, T

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare InP-based materials systems for multiple quantum well modulator application in the 1.06-mu-m wavelength range. Quantum well/barrier systems studied are the lattice-matched system InxGa1-xAsyP1-y/InP, the strained system InAsyP1-y/InP, and the strain-balanced system InAsyP1-y/InGa1-xP. 50 period samples were grown on InP substrates by chemical beam epitaxy. We find the ternary systems to be better than the quaternary in terms of exciton peak sharpness. The InAsyP1-y/InxGa1-xP system was best overall, with our results suggesting that it is coherently strained to the InP substrate.

引用

页码：2846 / 2848

页数：3

共 17 条

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