ELECTROABSORPTIVE MODULATORS IN INGAAS/ALGAAS

被引：31

作者：

PEZESHKI, B

LORD, SM

HARRIS, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.105266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Theoretical and experimental work shows that electroabsorption improves and the quantum-confined Stark effect becomes stronger in In0.2Ga0.8As/Al(x)Ga(1-x)As quantum wells as the aluminum concentration (x) is increased in the barriers. This improved electroabsorption was used in a reflection modulator that exhibited the largest reported reflectivity change of 77%.

引用

页码：888 / 890

页数：3

共 15 条

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