ELECTROOPTICAL BISTABILITY IN STRAINED INXGA1-XAS AL0.15GA0.85AS MULTIPLE QUANTUM-WELLS

被引：24

作者：

FUJIWARA, K ^{[1
]}

KAWASHIMA, K ^{[1
]}

KOBAYASHI, K ^{[1
]}

SANO, N ^{[1
]}

机构：

[1] KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using photocurrent spectroscopy, we have studied optical absorption properties of strained InxGa1-xAs/Al0.15Ga 0.85As multiple quantum wells grown by molecular beam epitaxy in the presence of electric fields perpendicular to the heterointerface. In the wavelength region where the bulk GaAs substrate is transparent, we observe the quantum confined Stark effect. Optical bistability of a self-electro-optic effect device is demonstrated at room temperature without removal of the GaAs substrate.

引用

页码：2234 / 2236

页数：3

共 14 条

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