MONOLITHIC INTEGRATION USING DIFFERENTIAL SI-MBE

被引：5

作者：

KASPER, E ^{[1
]}

HERZOG, HJ ^{[1
]}

WORNER, K ^{[1
]}

机构：

[1] TELEFUNKEN ELECTR,HEILBRONN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - MOLECULAR BEAM EPITAXY;

D O I：

10.1016/0022-0248(87)90433-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy of silicon on substrates with patterned oxide overlayers results in single-crystalline films in the oxide windows (differential Si-MBE). A concept for fabrication of monolithically integrated circuits using differential Si-MBE is given. We report about properties of differential Si-MBE films grown at temperatures between 550 and 750 degree C. Integrated bipolar transistors in differential Si-MBE films were fabricated and characterized. Transit frequencies up to 5 GHz could be realized with this design.

引用

页码：458 / 462

页数：5

共 6 条

[1] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION
BEAN, JC
ROZGONYI, GA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755
[2] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
BALLAMY, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785
[3] SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY
HERZOG, HJ
KASPER, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2227 - 2231
[4] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE)
KASPER, E
WORNER, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2481 - 2486
[5] KASPER E, 1984, 2ND P INT S VLSI SCI, P429
[6] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

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