CAPACITANCE VOLTAGE ANALYSIS AND CURRENT MODELING OF PULSE-DOPED MODFETS

被引：12

作者：

ROBLIN, P

ROHDIN, H

HUNG, CJ

CHIU, SW

机构：

[1] MOTOROLA INC,AUSTIN,TX 75252

[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2394 / 2404

页数：11

共 34 条

[21] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[22] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[23] A TREATISE ON THE CAPACITANCE-VOLTAGE RELATION OF HIGH ELECTRON-MOBILITY TRANSISTORS [J].

SADWICK, LP ;

WANG, KL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :651-656

[24] SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

PLOOG, K .

PHYSICAL REVIEW B, 1984, 30 (12) :7021-7029

[25] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

[26]

SUBRAMANIAN S, 1986, IEEE T ELECTRON DEV, V3, P707

[27]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[28]

TU C, 1985, GALLIUM ARSENIDE TEC

[29] SUBBANDS AND CHARGE CONTROL IN A TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR [J].

VINTER, B .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :307-309

[30]

WANG TF, COMMUNICATION

← 1 2 3 4 →