LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP ON GAAS1-YPY SUBSTRATES (Y=0.31 AND 0.39)

被引：10

作者：

FUJIMOTO, A

SHIMURA, M

WATANABE, H

TAKEUCHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 05期

关键词：

D O I：

10.1143/JJAP.26.675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：675 / 681

页数：7

共 20 条

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[10] LPE GROWTH OF LATTICE-MATCHED INGAASP ON GAAS0.69P0.31 SUBSTRATES AND LOW THRESHOLD CURRENT-DENSITY OPERATION OF VISIBLE INGAASP DH LASERS [J].

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