SURFACE RECOMBINATION EFFECTS IN SOFT-X-RAY EFFICIENCIES

被引：5

作者：

BENITEZ, EL

HUSK, DE

TARRIO, C

SCHNATTERLY, SE

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the soft x-ray efficiencies of a silicon p-i-n photodiode and a La2O2S:Tm phosphor over a broad energy range. We have also measured the inelastic electron scattering spectra of the constituent materials and obtained values of optical absorption coefficients versus energy. The energy dependence of the efficiencies is well explained by a model based on surface recombination of electron hole pairs, and the quality of data which can now be obtained from synchrotrons makes possible quantitative fits from which we obtain diffusion length, surface recombination velocity, and bulk quantum efficiency.

引用

页码：396 / 398

页数：3

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