N-CHANNEL MOS-TRANSISTORS IN MERCURY-CADMIUM-TELLURIDE

被引：25

作者：

KOLODNY, A

SHACHAMDIAMAND, YJ

KIDRON, I

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 03期

关键词：

D O I：

10.1109/T-ED.1980.19904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 595

页数：5

共 15 条

[1]

AMEURLAINE J, 1978, P IEDM WASHINGTON

[2] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J].

BARBE, DF .

PROCEEDINGS OF THE IEEE, 1975, 63 (01) :38-67

[3] HG0.7CD0.3TE CHARGE-COUPLED DEVICE SHIFT REGISTERS [J].

CHAPMAN, RA ;

KINCH, MA ;

SIMMONS, A ;

BORRELLO, SR ;

MORRIS, HB ;

WROBEL, JS ;

BUSS, DD .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :434-436

[4]

COBBOLD RSC, 1970, THEORY APPLICATION F, P242

[5]

DORNHAUS R, 1976, SPRINGER TRACTS MODE

[6]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] PROPERTIES OF ION-IMPLANTED JUNCTIONS IN MERCURY CADMIUM TELLURIDE [J].

KOLODNY, A ;

KIDRON, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :37-43

[8]

LONG D, 1978, TOPICS APPLIED PHYSI, P101

[9] INFRARED FOCAL PLANES IN INTRINSIC SEMICONDUCTORS [J].

LONGO, JT ;

CHEUNG, DT ;

ANDREWS, AM ;

WANG, CC ;

TRACY, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :213-232

[10] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J].

NEMIROVSKY, Y ;

KIDRON, I .

SOLID-STATE ELECTRONICS, 1979, 22 (10) :831-837

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