HIGH-TEMPERATURE X-RAY-DIFFRACTION STUDIES ON CR-DOPED V2O3

被引：12

作者：

CHANDRASHEKHAR, GV ^{[1
]}

SINHA, APB ^{[1
]}

机构：

[1] PURDUE UNIV, W LAFAYETTE, IN 47907 USA

来源：

MATERIALS RESEARCH BULLETIN | 1974年 / 9卷 / 06期

关键词：

D O I：

10.1016/0025-5408(74)90114-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：787 / 798

页数：12

共 11 条

[1]

CHANDRASHEKHAR GV, TO BE PUBLISHED

[2] CRYSTAL STRUCTURE OF V2O3 AND METAL-INSULATOR TRANSITION [J].

DERNIER, PD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (11) :2569-&

[3] GROWTH OF CRYSTALS OF V2O3 AND (V1-XCRX)2O3 BY TRI-ARC CZOCHRALSKI METHOD [J].

FAN, JCC ;

REED, TB .

MATERIALS RESEARCH BULLETIN, 1972, 7 (12) :1403-1409

[4] RE-EXAMINATION OF HIGH-TEMPERATURE RESISTIVITY ANOMALY IN (CR0.01V0.99)2O3 [J].

HONIG, JM ;

CHANDRASHEKHAR, GV ;

SINHA, APB .

PHYSICAL REVIEW LETTERS, 1974, 32 (01) :13-15

[5] Critical behavior of the Mott transition in Cr-doped V2O3 [J].

Jayaraman, A. ;

McWhan, D. B. ;

Remeika, J. P. ;

Dernier, P. D. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (09) :3751-3756

[6] Metal-insulator transition in (V1-xCrx)(2)O-3 [J].

McWhan, D. B. ;

Remeika, J. P. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (09) :3734-3750

[7] MOTT TRANSITION IN CR-DOPED V2O3 [J].

MCWHAN, DB ;

RICE, TM ;

REMEIKA, JP .

PHYSICAL REVIEW LETTERS, 1969, 23 (24) :1384-+

[8] METAL-INSULATOR TRANSITIONS IN PURE AND DOPED V2O3 [J].

MCWHAN, DB ;

MENTH, A ;

REMEIKA, JP ;

BRINKMAN, WF ;

RICE, TM .

PHYSICAL REVIEW B, 1973, 7 (05) :1920-1931

[9] METAL-INSULATOR TRANSITION IN TRANSITION METAL OXIDES [J].

RICE, TM ;

MCWHAN, DB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (03) :251-+

[10]

ROBINSON WA, IN PRESS

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