INTERACTIONS OF EFFICIENCY AND MATERIAL REQUIREMENTS FOR TERRESTRIAL SILICON SOLAR-CELLS

[1] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[2] DEMEO EA, 1978, ER589SR EPRI SPEC RE

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] Fischer H., 1975, 11th IEEE Photovoltaic Specialists Conference, P25

[5] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[6] GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40

[7] Goldman H., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P923

[8] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 715 - 716

[9] Haynos J. G., 1974, INT C PHOT POW GEN, P487

[10] Leonard S. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P641

[1] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[2] DEMEO EA, 1978, ER589SR EPRI SPEC RE

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] Fischer H., 1975, 11th IEEE Photovoltaic Specialists Conference, P25

[5] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[6] GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40

[7] Goldman H., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P923

[8] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 715 - 716

[9] Haynos J. G., 1974, INT C PHOT POW GEN, P487

[10] Leonard S. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P641